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| ASB0320/30/40 SMD Schottky Barrier Diode Features IO = 350mA VR = 20V to 40V - Low forward voltage - Designed for mounting on small surface. - Extremely thin package. - Majority carrier conduction. - Lead-free device 0.010(0.25)Typ. 0.033(0.85) 0.027(0.70) General Description 0603(1608) 0.071(1.80) 0.063(1.60) 0.039(1.00) 0.031(0.80) 0.012(0.30)Typ. 0.014(0.35)Typ. Dimensions in inches and (millimeter) P+ 1005(2512) 0.102(2.60) 0.095(2.40) Mechanical Data - Case : 0603(1608) 1005(2512) standard package, molded plastic. - Terminals : Gold plated, solderable per MIL-STD-750, method 2026. - Polarity : Indicated by cathode band. - Mounting position : Any. - Weight : BD:0.003gram (approximately) 0.014(0.35)Typ. 0.014(0.35)Typ. 0.051(1.30) 0.043(1.10) 0.035(0.90) 0.027(0.70) 0.012(0.30)Typ. Dimensions in inches and (millimeter) BF:0.006gram (approximately) Ordering information A XX 03X0 XX Feature SB : Schottky Barrier Part No. 2: ASB0320 3: ASB0330 4: ASB0340 Package type BD-0603 BF-1005 This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Aug 2, 2004 1/3 ASB0320/30/40 SMD Schottky Barrier Diode Maximum Rating (at TA=25C unless otherwise noted) Symbol Parameter ASB0320 ASB0330 ASB0340 Unit VRRM, VR VR(RMS) IO IFRM IFSM TSTG Tj Repetitive peak reverse voltage Reverse voltage RMS reverse voltage Average forward rectified current Repetitive peak forward current Forward current, surge peak 8.3 ms single half sine-wave Storage temperature Junction temperature 20 14 30 21 350 450 1.5 -40 to +125 -40 to +125 40 28 V V mA mA A C C Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit VF Forward voltage ASB0320 ASB0330 ASB0340 IF=20mA IF=200mA VR=10V VR=20V VR=30V f=1MHz, and 0 VDC reverse voltage IF=IR=10mA, Irr=0.1 x IR, RL=100 ohm - 50 6.4 0.37 0.6 5 5 5 - V IR CT Trr Reverse current uA pF nS Capacitance between terminals Reverse recovery time Anachip Corp. www.anachip.com.tw 2/3 Rev. 1.0 Aug 2, 2004 ASB0320/30/40 SMD Schottky Barrier Diode Rating And Characteristic Curves Fig. 1 - Forward characteristics Fig. 2 - Capacitance between terminals characteristics Fig. 3 - Current derating curve Marking Information BH BJ BK ASB0320 ASB0330 ASB0340 Anachip Corp. www.anachip.com.tw 3/3 Rev. 1.0 Aug 2, 2004 |
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